IRF540N N-channel MOSFET: specs and pinout
A 100 V N-channel HEXFET power MOSFET in a TO-220 package, used as a low-side switch. Figures are from the Infineon IRF540NPbF datasheet.
Specs
| Spec | Value | Source |
|---|---|---|
| Drain-source breakdown voltage | 100 V min | source Static table, V(BR)DSS, p.2 |
| Continuous drain current | 33 A at TC = 25 C; 23 A at TC = 100 C (VGS 10 V) | source Absolute Maximum Rating, p.1 |
| Pulsed drain current | 110 A | source Absolute Maximum Rating, p.1 |
| On-resistance RDS(on) | 44 milliohm max (VGS = 10 V, ID = 16 A) | source Static table, p.2 |
| Gate threshold voltage | 2.0 V min, 4.0 V max (VDS = VGS, ID = 250 uA) | source Static table, p.2 |
| Gate-source voltage | +/-20 V max | source Absolute Maximum Rating, p.1 |
| Total gate charge | 71 nC max (ID = 16 A, VDS = 80 V, VGS = 10 V) | source Dynamic table, p.2 |
| Power dissipation | 130 W at TC = 25 C | source Absolute Maximum Rating, p.1 |
| Thermal resistance | 1.15 C/W junction-to-case max; 62 C/W junction-to-ambient | source Thermal Resistance, p.1 |
| Operating junction temperature | -55 C to +175 C | source Absolute Maximum Rating, p.1 |
Pinout
The pinout is for the bare TO-220 part. If the stocked item is a ready-made switch board instead, its terminals are not covered by this datasheet.
| Pin | Function | Voltage | Notes | Source |
|---|---|---|---|---|
| 1 (G) | Gate | +/-20 V max | TO-220, tab is drain | source p.1 package and pin table |
| 2 (D) | Drain | 100 V max | Also the metal tab | source p.1 package and pin table |
| 3 (S) | Source | Connect to load return and ground | source p.1 package and pin table |
Build with it
Project ideas for the IRF540N N-channel MOSFET. Each link opens Soldr with the prompt filled in; Soldr assigns the pins, checks power and shows how to wire every part.
- Gate-voltage test rig: The sheet gives RDS(on) only at 10 V, so this measures what a 5 V PWM gate really does. The strip current is not from a datasheet here; the INA226 reads it. Learning project.
- 12V LED strip dimmer: Keep the load to one 1 m strip. The gate is driven by a 5 V PWM pin through a 10 ohm resistor, which is below the 10 V the sheet uses for RDS(on); check the part temperature while it runs. A logic-level MOSFET or a 10 V gate driver is the documented route for anything larger. Join the Uno ground to the 12 V supply ground.
- 12 V gate-drive stage test: A BC547 (100 mA limit, from its sheet) pulls the gate up to the 12 V rail through a pull-up resistor, giving the 10 V-class gate drive the IRF540N sheet's RDS(on) figure assumes; the Uno pin drives the BC547 base and the stage inverts. Keep the gate within +/-20 V. Pull-up and base resistor values are the builder's choice and the pack's values are not listed here. Test at low PWM frequency and check the part temperature. Learning project.
Common mistakes
- This is not a logic-level MOSFET: RDS(on) is specified at VGS = 10 V and the threshold is 2.0 to 4.0 V, so a 3.3 V or 5 V GPIO may not turn it fully on and it can run hot. Use a gate driver or a 10 V gate drive (source: link, Static table, p.2).
- The 33 A rating holds with the case at 25 C. At TC = 100 C it is 23 A, and with no heatsink the junction-to-ambient figure is 62 C/W, so plan a heatsink for more than a small current (source: link, p.1).
- Keep the gate voltage within +/-20 V, and put a diode across inductive loads such as a motor or solenoid (source: link, Absolute Maximum Rating, p.1).
Not covered by the official source
- The product is named IRF540N while the datasheet covers the IRF540NPbF TO-220; the figures are taken from that datasheet.
- Whether the stocked item is the bare TO-220 part or a board is not stated by the product name.
- The stocked 12 V solenoid valve has no sourced coil current, so no solenoid idea is given.
Sources
- link (Infineon IRF540NPbF datasheet, Rev. 2.1)